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電子束感生電流分析系統(tǒng)EBIC

電子束感生電流分析系統(tǒng)EBIC
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  尚豐科技向用戶提供專業(yè)的的電子束感生電流分析系統(tǒng)EBIC

  EBIC原理

  當(dāng)掃描電鏡電子束作用于半導(dǎo)體器件時(shí),如果電子束穿透半導(dǎo)體表面,電子束電子與器件材料晶格作用將產(chǎn)生電子與空穴。這些電子和空穴將能較為自由地運(yùn)動(dòng),但如果該位置沒(méi)有電場(chǎng)作用,它們將很快復(fù)合湮滅(發(fā)射陰極熒光),若該位置有電場(chǎng)作用(如晶體管或集成電路中的pn結(jié)),這些電子與空穴在電場(chǎng)作用下將相互分離。故一旦在pn結(jié)的耗盡層或其附近位置產(chǎn)生電子空穴對(duì),空穴將向p型側(cè)移動(dòng),電子將向n型側(cè)移動(dòng),這樣將有一靈敏放大器可檢測(cè)到的電流通過(guò)結(jié)區(qū)。該電流即為電子束感生電流(EBIC)。由于pn結(jié)的耗盡層有多的多余載流子,故在電場(chǎng)作用下的電子空穴分離會(huì)產(chǎn)生很高的電流值,而在其它的地方電流大小將受到擴(kuò)散長(zhǎng)度和擴(kuò)散壽命的限制,故利用EBIC進(jìn)行成像可以用來(lái)進(jìn)行集成電路中pn結(jié)的定位和損傷研究。 

  EBIC應(yīng)用領(lǐng)域包括但不限于:

  1)材料晶格缺陷探測(cè)分析,缺陷以黑點(diǎn)和黑線標(biāo)識(shí)出來(lái);

  

2)P-N結(jié)缺陷區(qū)域定位;

3)雙極電路中導(dǎo)致集電極-發(fā)射極漏電電流的收集管路的探測(cè);

4)探測(cè)額外連接或者多層摻雜;

5)確定靜電放電/電過(guò)載(ESD/EOS)導(dǎo)致的失效位置;

6)測(cè)量減壓層/耗盡層(depletion layer)寬度和少數(shù)載流子擴(kuò)散長(zhǎng)度和時(shí)間(minority carrier diffusion lengths/lifetimes)

等等。

EBIC圖像對(duì)于電子-空穴的重新組合非常敏感,因此EBIC技術(shù)能夠非常有效的對(duì)半導(dǎo)體材料缺陷等進(jìn)行失效分析。


  BenifitsMake the link between device characterization and materials properties

  • Image electrical activity across complete devices

  • Distinguish between electrically active and passive defects

  • Correlate electrical activity with composition (EDS) and crystallographic structure (EBSD)

  Localise electrical defects with highest resolution

  • Enable sample preparation for TEM or atom probe microscopy

  • Avoid alignment errors by directly imaging defects with EBIC in FIB SEM

  • Use live EBIC imaging to stop milling during sample preparation

  Map junctions and defects over large areas

  • Identify all electrically active defects

  • Map active areas of junctions and electrical fields

  • Validate doping profiles and areas

  Export calibrated EBIC signal for analysis of materials properties

  • Measure defect contrast / recombination strength

  • Extract diffusion length of minority charge carriers

  • Determine width of depletion regions

  Verify device operation modes with built-in biasing and live overlay

  • Image junctions and fields in delayered devices

  • Map electrical activity in solar cells under bias

  • Compare imaged behaviour with device modelling

  Access third dimension with depth profiling

  • Manipulate depth of EBIC signal by changing kV in SEM

  • Investigate EBIC images of cross-sections in FIB-SEM

  • Export EBIC depth series for 3D reconstruction

  FeaturesThe EBIC system is fully integrated and software controlled

  • Image acquisition and EBIC module are integrated into one software

  • All amplification and acquisition settings are software controlled

  • EBIC signal is automatically quantified and displayed in current values (μA, nA, pA)

  The most sophisticated and easy to use EBIC amplifier

  • Two stage amplification for maximum gain range

  • Built in -10…+10V DC bias with current compensation

  • Beam current output for SEM feedback and integration

  The most powerful and versatile SEM scanning system – DISS5

  • Integrated scan generator and image acquisition

  • Very large image resolution, up to 16k x 16k pixels

  • Very fast scanning speed, down to 200ns dwell time

  • Simultaneous 4x analogue and 12x digital counter inputs

  Optional electrical sample holder for large area devices

  • Suitable for solar cells, photovoltaics and light emitting diodes

  • Flexible mount in plan-view or cross-section configuration

  • Includes Faraday cups for beam current measurements

  Advanced controls are provided for calibration, biasing and scanning

  • Flexible pre-amplifier gain from as little as 10^3 to as high as 10^10 V/A

  • Further 0.1…100x gain and 100 μA compensation for optimum imaging

  • Electronics are optimised for high speed, providing 0.5 MHz at 10^9 V/A

  Simultaneous signals are mixed live for correlative microscopy

  • Up to 4x simultaneous signals

  • 12-bit digitization with signal integration (oversampling)

  • Live colour mixing tool for visualisation

  Current-voltage (IV) tool is integrated for contacts and nanoprobing

  • Voltage output maximum range is -10…+10 V

  • Gain selection for current measurements is automatic

  • IV may also be used for device characterisation

  Configurable scan profiles enable custom workflows for efficient use

  • Fast EBIC scan profile for alignment and navigation

  • High resolution EBIC scan profile for mapping and analysis

  • Simultaneous SE/EBIC scan profile for localization

  Live signal monitor assists image acquisition and calibration

  • Live line scan signals are displayed for optimisation

  • Multiple live signals are displayed simultaneously

  • The gradation graph improves display of complex shadows

  Advanced live scan tool enables advanced beam control

  • Select points, lines or areas from pre-scan images

  • Set number of points, step size, binning and averaging

  • Generate single or multiple diagrams

  • Export diagrams and/or raw data

  Gallery

  尚豐科技致力于引進(jìn)推廣先進(jìn)的材料、生物顯微觀測(cè)及微區(qū)分析儀器,向科研人員高附加值服務(wù)。我們擁有一支涉及眾多領(lǐng)域高素質(zhì)的應(yīng)用支持團(tuán)隊(duì),為各行業(yè)的應(yīng)用需求提供專業(yè)的解決方案和售后服務(wù)。


       敬請(qǐng)聯(lián)絡(luò) 

       尚豐科技(香港)有限公司

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